Ae:有效磁粉芯面积(cm2)与磁芯的横截面积相等(cross section area) le:有效磁路长度或称平均磁路长度(cm)(mean magnetic path length) V:磁芯体积:(cm3)(core volume) OD:磁芯外径(cm)(outside diameter of core) ID:磁芯内径(cm)(inside diameter of core) Ht:磁芯高度(cm) W:磁芯最小窗口面积(cm2) 1英寸(inches)=103mil=25.4mm |
µe:有效磁导率(无量纲)permeability B:磁通量密度(高斯Gauss)flux density(Gauss) H:磁场强度(奥斯特Oe)magnetizing(Oe) |
L=0.4πµeN2Ae*10-2/le Ln=Al&N<2>*10-3L:电感量(µH)1H=103mH=106µH=109nH inductance(µH) Al:额定电感量(nH/N2)nominal Inductance(nH/N2) µe:有效磁芯截面积 effective cores section area(cm2) Ae:有效磁路长度 mean magnetic path length(cm) N:线圈数: number of turns Ln:在N圈时的电感量(µH)Inductance at N turns(µH) |
H:磁场强度(Oersteds)magnetizing force(oersteds) N:圈数 number of turns I:电流(A)peak magnetizing current(amperes) Le:磁路长度(cm) mean magnetic path length(cm) 1Oersted=0.7958A/cm |
Q:品质因数 quality factor L:电感量(H)inductance(henries) ω:2πf(Hz)2π frequency(hertz) Rdc:绕线直流电阻(Ω)DC winding resistance(ohms) Rac:由于磁粉芯损耗而产生的阻抗(Ω)resistance due to core loss(ohms) Rcd:由于绕线中介电损耗而产生的阻抗(Ω)resistance due to winding dielectric loss(ohms) |
Bpk:最大磁通密度峰值(高斯Gauss)maximum flux density(gauss) Erms:通过绕正弦电压有效值(Vrms)sinusoidal RMS voltage across winding(Vrms) N:圈数 number of turns Ae:有效磁粉芯截面积(cm2)cross section area(cm2) f:正弦波形电压频率(Hz)frequency(hertz) 1特斯拉(T)=104高斯()Gauss=103mT |
Rac:由磁芯损耗产生的有效电阻(Ω)resistance due tp core loss(ohms) μe:有效磁导率 permeability L:电感量(H)inductance(H) a:磁滞损耗系数 hysteresis loss coefficient Bpk:AC磁通密度峰值(高斯Gauss)maximum flux density(gauss) c:剩磁损耗系数 residual loss coefficient f:频率(Hz)frequency(hertz) e:涡流损耗系数:eddy loss coefficient |